Exciton binding energy inInxGa1−xAs/GaAs strained quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.1284/fulltext
Reference21 articles.
1. Excitons in GaAs quantum wells
2. A Wannier Exciton in a Quantum Well: Subband Dependence
3. Energy levels of Wannier excitons inGaAs−Ga1−xAlxAsquantum-well structures
4. Observation of the excited level of excitons in GaAs quantum wells
5. Unambiguous observation of the2sstate of the light- and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structures
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1. Multiple polariton modes originating from the coupling of quantum wells in planar microcavity;Physical Review B;2015-08-31
2. Coherent Excitonic Coupling in an Asymmetric Double InGaAs Quantum Well Arises from Many-Body Effects;Physical Review Letters;2014-01-28
3. Temperature and hydrostatic pressure effects on the binding energy of magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells;Journal of Applied Physics;2011-06-15
4. Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors;Applied Physics Express;2009-04-03
5. Quantum-Structure-Dependent Excitonic Carrier Dynamics of InxGa1-xN/GaN Multi-Quantum-Wells;Journal of the Korean Physical Society;2007-06-15
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