Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.10154/fulltext
Reference39 articles.
1. Characterization of defects in Si and SiO2−Si using positrons
2. Helium desorption/permeation from bubbles in silicon: A novel method of void production
3. The annealing of helium-induced cavities in silicon and the inhibiting role of oxygen
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