Energetics of the Si(111) and Ge(111) surfaces and the effect of strain
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.5374/fulltext
Reference42 articles.
1. Newπ-Bonded Chain Model for Si(111)-(2×1) Surface
2. Structural Properties of Cleaved Silicon and Germanium Surfaces
3. Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys
4. Stability and surface properties of GeSi alloy films on Si(111) substrate
5. Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy
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1. Application to prototypical homopolar semiconductor clean surfaces;Physics of Solid Surfaces;2018
2. Si(111) strained layers on Ge(111): Evidence for c ( 2×4 ) domains;Physical Review B;2017-08-01
3. Strain-induced structure transformations on Si(111) and Ge(111) surfaces: A combined density-functional and scanning tunneling microscopy study;The Journal of Chemical Physics;2013-06-14
4. Semiconductor Surface Chemistry;Chemical Bonding at Surfaces and Interfaces;2008
5. 4×1to7×3transition in theIn∕GexSi1−x(111)system induced by varying the substrate lattice constant;Physical Review B;2007-08-13
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