Absorption inp-type Si-SiGe strained quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.2339/fulltext
Reference7 articles.
1. New electron states in GaAs-GaxAl1-xAs superlattice
2. Electronic structure of GaAs-Ga1−xAlxAs quantum well and sawtooth superlattices
3. Local empirical pseudopotential approach to the optical properties of Si/Ge superlattices
4. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
5. Exchange interactions in quantum well subbands
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