Final-state pseudopotential theory for the Ge 3dcore-level shifts on the Ge/Si(100)-(2×1) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.17139/fulltext
Reference23 articles.
1. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. STM study of geometric and electronic structures of Ge dimers on Si(001)
4. Direct measurement of the asymmetric dimer buckling of Ge on Si(001)
5. Bond length of Ge dimers at Si(001)
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