Exciton binding energies in shallow GaAs-AlyGa1−yAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.11251/fulltext
Reference16 articles.
1. Excitonic electroabsorption in extremely shallow quantum wells
2. Fast escape of photocreated carriers out of shallow quantum wells
3. Measured transition from two-dimensional to three-dimensional electroabsorption as quantum-well barriers are lowered
4. Unambiguous observation of the2sstate of the light- and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structures
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