Temperature and bias-voltage dependent transport in magnetic tunnel junctions with low energy Ar-ion irradiated barriers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.224437/fulltext
Reference23 articles.
1. Magnetic tunneling applied to memory (invited)
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4. Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions
5. Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions
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