Strain-induced metal-insulator transition of the Ge(111) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.4421/fulltext
Reference8 articles.
1. 7×7 Reconstruction of Ge(111) Surfaces under Compressive Strain
2. Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries
3. Angle-resolved photoemission studies of Ge(111)-c(2×8), Ge(111)-(1×1)H, Si(111)-(7×7), and Si(100)-(2×1)
4. Electronic structure of Ge(111) and Ge(111): H from angle-resolved-photoemission measurements
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1. A comparative study on the coordination of diglycolamide isomers with Nd(iii): extraction, third phase formation, structure, and computational studies;RSC Advances;2021
2. Photoemission study of Pb on Ge(111);Physical Review B;1993-02-15
3. Atomic origins of surface core levels on Si(111)-(7×7) studied by site-dependent Ge substitution;Physical Review B;1992-02-15
4. Chapter 5 Surface States on Semiconductors;Angle-Resolved Photoemission - Theory and Current Applications;1992
5. Surface phase transitions on clean Ge(111) studied by spectroscopic ellipsometry;Physical Review B;1990-05-15
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