Doping efficiency inn-type InP nanowires-Reference-Cited by-同舟云学术

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Doping efficiency inn-type InP nanowires

Published:2013-09-20 Issue:11 Volume:88 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Besteiro Lucas V.,Tortajada Luis,Souto J.,Gallego L. J.,Chelikowsky James R.,Alemany M. M. G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.115310/fulltext

Reference25 articles.

1. Functional Nanowires

2. First-principles study ofn- andp-doped silicon nanoclusters

3. Quantum confinement, core level shifts, and dopant segregation in P-dopedSi⟨110⟩nanowires

4. Stability of theDX−Center in GaAs Quantum Dots

5. n-type doping via avoiding the stabilization ofDXcenters in InP quantum dots

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single crystalline nitrogen-doped InP nanowires for low-voltage field-effect transistors and photodetectors on rigid silicon and flexible mica substrates;Nano Energy;2015-07

2. Study of carrier concentration in single InP nanowires by luminescence and Hall measurements;Nanotechnology;2015-01-06

3. High order forces and nonlocal operators in a Kohn–Sham Hamiltonian;Physical Chemistry Chemical Physics;2015

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