Phonon properties and Raman response of (113) GaAs/AlAs corrugated superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.1647/fulltext
Reference16 articles.
1. Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces
2. Semiconductor quantum-wire structures directly grown on high-index surfaces
3. Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy
4. Atomic‐scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short‐period superlattices
5. Adiabatic bond charge model for the phonons in diamond, Si, Ge, andα−Sn
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2. Study of phonons in self-assembled InAs quantum dots embedded in an InGaAlAs matrix;Physica E: Low-dimensional Systems and Nanostructures;2014-03
3. Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films;Journal of Crystal Growth;2013-09
4. Evaluation of the bond polarizabilities of zincblende-type semiconductors: Application to the Raman spectra of disordered GaSb/AlSb (001) superlattices;physica status solidi (b);2012-05-07
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