Orientational ordering and domain-wall formation in Sb overlayers on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.3918/fulltext
Reference17 articles.
1. Orientational Epitaxy—the Orientational Ordering of Incommensurate Structures
2. Substrate-induced strain and orientational ordering in adsorbed monolayers
3. Fermi-Level Pinning at the Sb/GaAs(110) Surface Studied by Scanning Tunneling Spectroscopy
4. Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy
5. Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)Bi
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1. Bi epitaxy on polar InSb(111)A/Bfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-07
2. Influence of the deposition rate on the structure of thin metal layers;Thin Solid Films;1998-04
3. Antimony adsorption on InAs(110);Physical Review B;1998-02-15
4. Adsorption of group-V elements on III–V (1 1 0) surfaces;Surface Science Reports;1996-11
5. Structural, optical and electrical properties of state of the art cubic SiC films;Materials Science and Engineering: B;1995-01
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