Quantum Hall effect inIn0.53Ga0.47As-InP heterojunctions with two populated electric subbands
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.3990/fulltext
Reference15 articles.
1. Temperature dependence of the quantum Hall resistance
2. Zero resistance state and origin of the quantized Hall effect in two-dimensional electron systems
3. 1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD
4. Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition
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