Bonding or antibonding position of hydrogen in silicon

Author:

Baranowski Jacek M.,Tatarkiewicz Jakub

Publisher

American Physical Society (APS)

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A technique to study the lattice location of light elements in silicon by channeling elastic recoil detection analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08

2. Hydrogen;Silicon;2004

3. Hydrogen-related defects in crystalline semiconductors: a theorist's perspective;Materials Science and Engineering: R: Reports;1995-06

4. A microscopic model of dangling bonds at interfaces of ordered and disordered semiconductors†;International Journal of Electronics;1994-09

5. Adiabatic potentials for weak-bond/dangling-bond conversion model in a-Si:H;Journal of Non-Crystalline Solids;1993-02

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