Recombination of excitons bound to oxygen and silicon donors in freestanding GaN-Reference-Cited by-同舟云学术

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Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

Published:2002-12-26 Issue:24 Volume:66 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wysmolek A.,Korona K. P.,Stȩpniewski R.,Baranowski J. M.,Błoniarz J.,Potemski M.,Jones R. L.,Look D. C.,Kuhl J.,Park S. S.,Lee S. K.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.245317/fulltext

Reference26 articles.

1. Predicted maximum mobility in bulk GaN

2. Identification of the Γ5 and Γ6 free excitons in GaN

3. Optical properties of GaN grown by hydride vapor-phase epitaxy

4. Two-Electron Transitions in the Luminescence of Excitons Bound to Neutral Donors in Gallium Phosphide

5. Excited States of Bound Exciton Complexes in CdS

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2. Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk;Nano Letters;2022-10-18

3. Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium;Applied Surface Science;2022-03

4. Carrier Diffusion in GaN : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion;Physical Review Applied;2022-02-07

5. Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects;Applied Surface Science;2021-11

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