Ultrasonic attenuation by impurities in semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.15.4907/fulltext
Reference29 articles.
1. Ultrasonic loss and gain mechanisms in semiconductors
2. Interaction of Microwave Phonons with Donor Electrons in Ge and Si
3. Hypersonic Attenuation in Sb Doped Germanium
4. Ultrasonic Wave Propagation in Dopedn-Germanium andp-Silicon
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1. Magnetic field effects on boron-doped Si oscillators;Physical Review B;1997-12-01
2. Selection Rules for Point-Defect Anelastic Relaxations : Classical versus Quantum Mechanical;Le Journal de Physique IV;1996-12
3. Is Silicon a Glass? Measurements of the Mechanical Properties of Boron-Doped and Single-Crystal Silicon;Springer Series in Solid-State Sciences;1993
4. Low temperature mechanical properties of boron-doped silicon;Physical Review Letters;1992-05-18
5. The change in sound velocity due to donor pairs in Ge;Journal of Physics C: Solid State Physics;1988-03-10
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