Adsorption and thermal reactions of disilane and the growth of Si films on Ge(100)-(2×1)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.6543/fulltext
Reference39 articles.
1. Thermal and electron-beam-induced reaction of disilane on Si(100)-(2×1)
2. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
3. Gas source silicon molecular beam epitaxy using disilane
4. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
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