STM characterization of extended dislocation configurations in Au(001)-Reference-Cited by-同舟云学术

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STM characterization of extended dislocation configurations in Au(001)

Published:1998-07-15 Issue:3 Volume:58 Page:1169-1172
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

de la Figuera J.,González M. A.,García-Martínez R.,Rojo J. M.,Hernán O. S.,Vázquez de Parga A. L.,Miranda R.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.1169/fulltext

Reference27 articles.

1. The growth of crystals and the equilibrium structure of their surfaces

2. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

3. Dislocation Mechanism for Island Diffusion on fcc (111) Surfaces

4. Near-Surface Buckling in Strained Metal Overlayer Systems

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3. Introduction;Fundamental Physicochemical Properties of Germanene-Related Materials;2023

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