Optically detected magnetic resonance of Si donors inAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.11808/fulltext
Reference28 articles.
1. Te and Ge — doping studies in Ga1−xAlxAs
2. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
3. A new model of deep donor centres in AlxGa1-xAs
4. A photoluminescence study of the donor structure in AlxGa1-xAs
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Magneto-optical and magnetic resonance investigations of DX centres in Te-doped;Semiconductor Science and Technology;1996-01-01
2. Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs;Materials Science Forum;1995-11
3. Photoluminescence of AlxGa1−xAs alloys;Journal of Applied Physics;1994-05-15
4. Coexistence of two deep donor states,DX−andDX0, of the Sn donor inGa1−xAlxAs;Physical Review B;1992-05-15
5. Magnetic resonance studies of group IV and VI donors in Ga1-xAlxAs;Semiconductor Science and Technology;1991-10-01
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