Frustrated dimers at theCoSi2/Si(001) interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.2783/fulltext
Reference14 articles.
1. Evidence for a dimer reconstruction at a metal-silicon interface
2. Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation
3. Schottky-barrier inhomogeneity at epitaxialNiSi2interfaces on Si(100)
4. Real-space determination of atomic structure and bond relaxation at theNiSi2-Si(111) interface
5. Determination of the atomic structure of the epitaxialCoSi2:Si(111) interface using high-resolution Rutherford backscattering
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1. Ultralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Silicon;ACS Nano;2016-12-30
2. Ab initiostudies of theCoSi2(100)/Si(100)interface;Physical Review B;2000-07-15
3. Energy loss and straggling for 50- and 100-keVH+ions passing through the Si(001)2×1-Sb surface;Physical Review B;1997-09-15
4. Surfactant-mediated growth of CoSi2 on Si(100);Surface Science;1997-06
5. LEED structure determination of the (100)-surface of a CoSi2 crystal and a CoSi2 film grown epitaxially on Si(100);Surface Science;1996-02
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