Signature of an intrinsic point defect inGaNxAs1−x
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.033203/fulltext
Reference19 articles.
1. Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSe
2. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
3. Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
4. Bowing parameter of the band-gap energy of GaNxAs1−x
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