Correlated defect creation and dose-dependent radiation sensitivity in amorphousSiO2
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.5132/fulltext
Reference32 articles.
1. Determination of the Si–O–Si bond angle distribution in vitreous silica by magic angle spinning NMR
2. Steric origin of the silicon‐oxygen‐silicon angle distribution in silica
3. Ab initio calculated geometries and charge distributions for H4SiO4 and H6Si2O7 compared with experimental values for silicates and siloxanes
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