Calculated shallow-donor-level binding energies in GaAs-AlxGa1−xAs quantum wells-Reference-Cited by-同舟云学术

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Calculated shallow-donor-level binding energies in GaAs-AlxGa1−xAs quantum wells

Published:1989-10-15 Issue:12 Volume:40 Page:8466-8472
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Stopa M.,Das Sarma S.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.8466/fulltext

Reference9 articles.

1. Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells

2. Raman scattering from electrons bound to shallow donors inGaAs−AlxGa1−xAsquantum-well structures

3. Hydrogenic impurity states in a quantum well: A simple model

4. Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation

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1. Resonant and non-resonant impurity states related to quantum well subbands;2024-08-13

2. Background impurities and a delta-doped QW. Part I: Center doping;Semiconductor Science and Technology;2019-11-04

3. On some new effects in delta-doped QWs;Physica E: Low-dimensional Systems and Nanostructures;2015-02

4. Impurity binding energy for δ-doped quantum well structures;Bulletin of Materials Science;2014-10

5. On the possibility of tuning the energy separation between space-quantized levels in a quantum well;Philosophical Magazine Letters;2013-01

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