Proton-implantation-induced defects inn-type6H- and4H−SiC:An electron paramagnetic resonance study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.10126/fulltext
Reference32 articles.
1. Ion beam processing of single crystalline silicon carbide
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4. Transition Metals in SiC Polytypes, as Studied by Magnetic Resonance Techniques
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