Impurity-band density of states in heavily doped semiconductors: A variational calculation-Reference-Cited by-同舟云学术

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Impurity-band density of states in heavily doped semiconductors: A variational calculation

Published:1980-12-15 Issue:12 Volume:22 Page:6222-6232
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sa-yakanit V.,Glyde H. R.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.6222/fulltext

Reference40 articles.

1. Heavily doped semiconductors and devices

2. Models and method of calculation of doping and injection-dependent impurity density of states in GaAS

3. Impurity-Band Tails in the High-Density Limit. I. Minimum Counting Methods

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