Quantum size and shape effects on the excited states ofInxGa1−xAsquantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.245337/fulltext
Reference58 articles.
1. Low threshold, large To injection laser emission from (InGa)As quantum dots
2. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
3. Multidimensional quantum well laser and temperature dependence of its threshold current
4. Volume-expansion-induced lattice instability and solid-state amorphization
5. Size-dependent electronic level structure of InAs nanocrystal quantum dots: Test of multiband effective mass theory
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