Defects in silicon afterB+implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy-Reference-Cited by-同舟云学术

Defects in silicon afterB+implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy

Published:1997-07-15 Issue:3 Volume:56 Page:1393-1403
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Eichler S.,Gebauer J.,Börner F.,Polity A.,Krause-Rehberg R.,Wendler E.,Weber B.,Wesch W.,Börner H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.1393/fulltext

Reference37 articles.

1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

2. Characterization of defects in Si and SiO2−Si using positrons

3. Computer Simulation of Ion-Solid Interactions

4. Ionenimplantation

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