Random and channeling stopping powers of He and Li ions in Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.075203/fulltext
Reference35 articles.
1. Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directions
2. Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si〈100〉 direction
3. Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra
4. Impact-parameter dependent stopping powers for MeV He ions in Si crystals
5. Distribution of occupation numbers in finite Fermi systemsand role of interaction in chaos and thermalization
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