Angular dependence of the tunneling anisotropic magnetoresistance in magnetic tunnel junctions
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.045312/fulltext
Reference27 articles.
1. Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer
2. Tunnel magnetoresistance in GaMnAs: Going beyond Jullière formula
3. Very Large Tunneling Anisotropic Magnetoresistance of a(Ga,Mn)As/GaAs/(Ga,Mn)AsStack
4. Origin of the Tunnel Anisotropic Magnetoresistance inGa1−xMnxAs/ZnSe/Ga1−xMnxAsMagnetic Tunnel Junctions of II-VI/III-V Heterostructures
5. Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling inFe/GaAs/AuTunnel Junctions
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