The (100) silicon—silicon dioxide interface. II. The SiLVVAuger lines
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.24.4604/fulltext
Reference20 articles.
1. Valence-band Auger line shapes for Si surfaces: Simplified theory and corrected numerical results
2. Energy-band theory of Auger line shapes: SiliconL2,3VVand lithiumKVV
3. Theory of valence-band Auger line shapes: Ideal Si (111), (100), and (110)
4. Transition density of states for Si(100) from L1L23V and L23VV Auger spectra
5. Calculated and measured Auger line shapes in SiO2
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1. Study of silicon/oxides interfaces by means of Si2p resonant photoemission;Thin Solid Films;2008-11
2. Auger-photoelectron coincidence spectroscopy of SiO2;Journal of Electron Spectroscopy and Related Phenomena;2007-10
3. Auger electron spectroscopy study of the electronic structure of porous silicon–metal interfaces;Journal of Electron Spectroscopy and Related Phenomena;1997-02
4. Initial oxidation of silicon (100): A unified chemical model for thin and thick oxide growth rates and interfacial structure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-07
5. Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system;Physical Review B;1990-02-15
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