Silicon vacancy-type defects in as-received and 12-MeV proton-irradiated6H−SiCstudied by positron annihilation spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.115210/fulltext
Reference40 articles.
1. Electrical and optical characterization of SiC
2. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
3. Defect energy levels in electron-irradiated and deuterium-implanted6Hsilicon carbide
4. ESR in irradiated silicon carbide
5. Electron spin resonance in electron‐irradiated 3C‐SiC
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