Dimer buckling induced by single-dimer vacancies on the Si(001) surface nearTc
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.10483/fulltext
Reference25 articles.
1. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon
2. Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy
3. Scanning tunneling microscopy of Si(001)
4. Atomic and Electronic Structures of Reconstructed Si(100) Surfaces
5. Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)
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