Time-resolved photoluminescence of pseudomorphic SiGe quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.16608/fulltext
Reference19 articles.
1. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
2. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy
3. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
4. Direct observation of band‐edge luminescence and alloy luminescence from ultrametastable silicon‐germanium alloy layers
5. Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy
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