Binding energies of ground and excited states of shallow acceptors in GaAs/Ga1−xAlxAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.5349/fulltext
Reference23 articles.
1. Extrinsic photoluminescence from GaAs quantum wells
2. Magnetoreflectance and luminescense study of beryllium acceptors in selectively doped GaAs/AlxGa1−xAs multiple quantum wells
3. Far-infrared study of confinement effects on acceptors inGaAsAlxGa1−xAsquantum wells
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