Electron paramagnetic resonance and photoluminescence study of Er-impurity complexes in Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.2773/fulltext
Reference32 articles.
1. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
2. Optical activation and excitation mechanisms of Er implanted in Si
3. Room‐temperature electroluminescence from Er‐doped crystalline Si
4. Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes
5. Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si
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