Phase transitions on Si(113): A high-temperature scanning-tunneling-microscopy study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.4092/fulltext
Reference13 articles.
1. Atomic structure of Si and Ge surfaces: Models for (113), (115), and stepped (001) vicinal surfaces
2. Experimental evidence for chiral melting of the Ge(113) and Si(113) 3×1 surface phases
3. LEED studies of clean high Miller index surfaces of silicon
4. Disordering of the (3×1) reconstruction on Si(113) and the chiral three-state Potts model
5. Critical behavior at chiral melting: Disordering of the Si(113)-(3×1) reconstruction
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1. Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy;Beilstein Journal of Nanotechnology;2022-02-03
2. Phase transition: group IV elements and IV–IV compounds: Si;Physics of Solid Surfaces;2018
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4. Influence of temperature on the controlled growth kinetics and superstructural phase formation of indium on a reconstructed Si (113) 3 × 2 surface;Materials Research Express;2014-02-26
5. Strain-Driven Formation of Nanostripes on In/Si(113) Surface;Chinese Physics Letters;2010-08
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