Pressure-induced negative charge state of theEL2 defect in its metastable configuration
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.2070/fulltext
Reference43 articles.
1. Identification of oxygen‐related midgap level in GaAs
2. Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels
3. Insights into Metastable Defects in Semi-Insulating GaAs from Electronic Raman Studies of Nonequilibrium Holes
4. Unification of the properties of theEL2 defect in GaAs
5. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
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