Occupation of electron subbands in optically excitedδ-acceptor-doped GaAs/AlxGa1−xAs heterostructure
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.245313/fulltext
Reference25 articles.
1. Observation of intersubband scattering in a 2-dimensional electron system
2. Influence of Intersubband Scattering on the Magnetic Field Dependence of the Conductivity Tensor
3. The effect of second subband occupation on the thermopower of a high mobility GaAs-Al0.33Ga0.67As heterojunction
4. Spin dynamics in the second subband of a quasi–two-dimensional system studied in a single-barrier heterostructure by time-resolved Kerr rotation
5. Second subband population of the two-dimensional electron gas in strongly coupledGaAs/Al0.3Ga0.7Asdouble quantum wells
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