Energy distribution of light-induced gap states in hydrogenated amorphous-silicon alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.5995/fulltext
Reference24 articles.
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1. Influence of light-soaking and annealing on electron and hole mobility–lifetime products in a-Si:H;Journal of Non-Crystalline Solids;2004-06
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3. New experiments on the relationship between light-induced defects and photoconductivity degradation;MRS Proceedings;2001
4. Low Temperature Short Time Response of Light Induced Defects in a-Si:H;Tenth E.C. Photovoltaic Solar Energy Conference;1991
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