Absolute surface energies of group-IV semiconductors: Dependence on orientation and reconstruction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.115318/fulltext
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1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)
3. MBE growth of quantum-size Si-dots on SiC(0001) monitored by RHEED
4. Formation of carbon-induced germanium dots
5. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
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