Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.5276/fulltext
Reference20 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Effect of strain on surface morphology in highly strained InGaAs films
3. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)
4. Evolution of surface morphology and strain during SiGe epitaxy
5. Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)
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