Independent and correlated composition behavior of material properties: Application to energy band gaps for theGaαIn1−αPβAs1−βandGaαIn1−αPβSbγAs1−β−γalloys-Reference-Cited by-同舟云学术

Independent and correlated composition behavior of material properties: Application to energy band gaps for theGaαIn1−αPβAs1−βandGaαIn1−αPβSbγAs1−β−γalloys

Published:1998-07-15 Issue:4 Volume:58 Page:1940-1946
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Shim Kyurhee,Rabitz Herschel

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.1940/fulltext

Reference13 articles.

1. Electroabsorption modulators for high-bit-rate optical communications: a comparison of strained InGaAs/InAIAs and InGaAsP/InGaAsP MQW

2. Does the two‐dimensional electron gas effect contribute to high‐frequency and high‐speed performance of field‐effect transistors?

3. Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−ylattice matched to InP

4. Electronic structure of the quaternary alloyGaxIn1−xAsyP1−y: A coherent-potential-approximation calculation

5. Electronic density of states of semiconductor alloys from lattice-mismatched isovalent binary constituents

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