Theory of photoabsorption in modulation-doped semiconductor quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.1300/fulltext
Reference44 articles.
1. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
2. Transport properties of selectively doped GaAs‐(AlGa)As heterostructures grown by molecular beam epitaxy
3. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
4. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
5. The structural dependence of light sensitivity in (Al,Ga)As/GaAs modulation doped heterostructures
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