Hydrogen-induced passivation of nitrogen inGaAs1−yNy-Reference-Cited by-同舟云学术

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Hydrogen-induced passivation of nitrogen inGaAs1−yNy

Published:2002-06-19 Issue:23 Volume:65 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bissiri M.,Baldassarri Höger von Högersthal G.,Polimeni A.,Gaspari V.,Ranalli F.,Capizzi M.,Bonapasta A. Amore,Jiang F.,Stavola M.,Gollub D.,Fischer M.,Reinhardt M.,Forchel A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.235210/fulltext

Reference18 articles.

1. Electronic Properties of Ga(In)NAs Alloys

2. Theory of electronic structure evolution in GaAsN and GaPN alloys

3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

4. Effect of hydrogen on the electronic properties ofInxGa1−xAs1−yNy/GaAsquantum wells

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of In in Hydrogenation of N-Related Complexes in GaInNAs;ACS Applied Electronic Materials;2019-03-22

2. Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities;Photonics;2018-05-15

3. The effect and nature of N–H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs;RSC Advances;2017

4. Genesis of “Solitary Cations” Induced by Atomic Hydrogen;Advanced Functional Materials;2015-07-27

5. Technological Applications of Hydrogenated Dilute Nitrides and Perspectives;Hydrogenated Dilute Nitride Semiconductors;2015-04-01

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