Bulk electronic structure ofAlB2-type erbium disilicide with and without Si vacancies-Reference-Cited by-同舟云学术

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Bulk electronic structure ofAlB2-type erbium disilicide with and without Si vacancies

Published:1992-11-15 Issue:20 Volume:46 Page:13201-13206
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Stauffer L.,Pirri C.,Wetzel P.,Mharchi A.,Paki P.,Bolmont D.,Gewinner G.,Minot C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.13201/fulltext

Reference20 articles.

1. Formation of epitaxial yttrium and erbium silicide on Si(111) in ultra-high vacuum

2. Fabrication and structure of epitaxial Er silicide films on (111) Si

3. Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties

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