Terahertz-induced interband tunneling of electrons in GaAs-Reference-Cited by-同舟云学术

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Terahertz-induced interband tunneling of electrons in GaAs

Published:2010-08-06 Issue:7 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kuehn W.,Gaal P.,Reimann K.,Woerner M.,Elsaesser T.,Hey R.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.075204/fulltext

Reference50 articles.

1. �ber die Quantenmechanik der Elektronen in Kristallgittern

2. Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures

3. Electronic Structure of GaAs

4. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors

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