Interface-roughness-controlled exciton mobilities in GaAs/Al0.37Ga0.63As quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.3220/fulltext
Reference23 articles.
1. Interface Roughness Scattering and Electron Mobilities in Thin GaAs Quantum Wells
2. Interface roughness scattering in GaAs/AlAs quantum wells
3. Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption
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