High-quality epitaxial growth ofγ-alumina films onα-alumina sapphire induced by ion-beam bombardment
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.17518/fulltext
Reference25 articles.
1. Nucleation and Concurrent Anomalous Grain Growth of alpha-Al2O3 During gamma - alpha Phase Transformation
2. Ion implantation and annealing of crystalline oxides and ceramic materials
3. Time resolved reflectivity measurements of the amorphous-to-gamma and gamma-to-alpha phase transitions in ion-implanted Al2O3
4. Doping effects on the kinetics of solid‐phase epitaxial growth of amorphous alumina thin films on sapphire
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