Tunneling properties ofAlxGa1−xAs and AlAs barriers studied by ballistic electron luminescence spectroscopy-Reference-Cited by-同舟云学术

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Tunneling properties ofAlxGa1−xAs and AlAs barriers studied by ballistic electron luminescence spectroscopy

Published:1996-11-15 Issue:19 Volume:54 Page:13868-13877
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Petrov M. V.,Parihar S. R.,Lyon S. A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.13868/fulltext

Reference26 articles.

1. Direct Observation of Ballistic Transport in GaAs

2. Spectrum and polarization of hot-electron photoluminescence in semiconductors

3. Resonant tunneling throughX‐valley states in GaAs/AlAs/GaAs single‐barrier heterostructures

4. Electroluminescence of ballistically injected electrons in AlGaAs/GaAs heterodiodes

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1. On the vibron-polaron damping in quasi 1D macromolecular chains;Journal of Physics: Conference Series;2018-02

2. Effect of electron-optical phonon interaction on resonant tunneling in coupled quantum wells;The European Physical Journal B;2012-04

3. Hot electron spectroscopy and microscopy;Reports on Progress in Physics;2004-08-27

4. Interface optical phonon-assisted tunneling in double-barrier structures;Physical Review B;2001-09-10

5. Monte Carlo study of dc and ac vertical electron transport in a single-barrier heterostructure;Physical Review B;2001-03-23

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