Electron-spin-resonance-transient spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.54/fulltext
Reference18 articles.
1. Observation of Spin-Dependent Thermal Emission from Deep Levels in Semiconductors
2. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
3. Isothermal Capacitance Transient Spectroscopy
4. Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopy
5. Thermal Release of Trapped Space Charge in Solids
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1. Influence of Light-Soaking Temperature on the Distribution of Thermal-Annealing Activation Energies for Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon;Japanese Journal of Applied Physics;1995-11-15
2. Influence of Light-Soaking Temperature on the Distribution of Thermal-Annealing Activation Energies for Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon;Japanese Journal of Applied Physics;1995-11-01
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4. Amplitude Dependence of Metastable Defect Formation;MRS Proceedings;1993-01-01
5. Heterogeneous distributions and dispersive photodissociation rates of benzo[a]pyrene diol-epoxide enantiomer-DNA and -poly (dG-dC) · poly (dG-dC) adducts;Biophysical Chemistry;1992-02
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