Electronic structure of GaAs with an InAs (001) monolayer
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.10776/fulltext
Reference20 articles.
1. InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy
2. Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures
3. Effect of indium replacement by gallium on InAs/GaAs quantized levels
4. Optical investigation of the electronic structure of single ultrathin InAs layers grown pseudomorphically on (100) and (311)AGaAs substrates
5. Electronic structure of an InAs monomolecular plane in GaAs
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1. Potential profile of the quantum step in semiconductors and the example of GaN;Semiconductor Science and Technology;2012-07-11
2. Optical and electronic properties of (GaAs)n / (InAs)n(001) superlattices: LMTO-ASA approach;Superlattices and Microstructures;2008-01
3. Exciton spin splitting in ultrathin InAs layers;Applied Physics Letters;2007-02-12
4. Chemical and structural effects of two-dimensional isovalent substitutions inA(III)−B(V)semiconductors;Physical Review B;2002-01-07
5. Deep level transient spectroscopy and pseudopotential superlattice calculation for an InAs monolayer embedded in GaAs;Journal of Applied Physics;2000-07-15
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